WNM2020 n-channel, 20v, 0.90a, small signal mosfet descriptions the WNM2020 is n-channel enhancement mos field effect transistor. uses advanced trench technology and desig n to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, load switch and level shift. standard product WNM2020 is pb-free. features z trench technology z supper high density cell design z excellent on resistance z extremely low threshold voltage z small package sot-23 applications z dc-dc converter circuit z small signal switch z load switch z level shift z sot-23 pin configuration (top view) w28* w28 = device code * = month (a~z) marking order information device package shipping WNM2020-3/tr sot-23 3000/reel&tape v ds (v) rds(on) (
) 0.220@ v gs =4.5v 0.260@ v gs =2.5v 20 0. 320 @ v gs =1.8v 3 2 1 s d 1 2 3 g product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
2 of 3 absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds 20 gate-source voltage v gs 6 v t a =25c 0.90 0.83 continuous drain current a t a =70c i d 0.72 0.66 a t a =25c 0.38 0.32 maximum power dissipation a t a =70c p d 0.24 0.20 w t a =25c 0.79 0.71 continuous drain current b t a =70c i d 0.63 0.57 a t a =25c 0.29 0.24 maximum power dissipation b t a =70c p d 0.19 0.15 w pulsed drain current c i dm 1.4 a operating junction temperature t j -55 to 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t ? 10 s 270 325 junction-to-ambient thermal resistance a steady state r ja 320 385 t ? 10 s 360 420 junction-to-ambient thermal resistance b steady state r ja 425 520 junction-to-case thermal resistance steady state r jc 260 300 c/w a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j =150c. product specification WNM2020 sales@twtysemi.com http://www.twtysemi.com
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = 250ua 20 v zero gate voltage drain current i dss v ds =16 v, v gs gate-to-source leakage current i gss v ds = 0 v, v gs =5v 5 ua on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 250ua 0.45 0.58 0.85 v v gs = 4.5v, i d = 0.55a v gs = 2.5v, i d = 0.45a drain-to-source on-resistance r ds(on) v gs = 1.8v, i d = 0.35a m ? forward transconductance g fs v ds = 5 v, i d = 0.55a 2.0 s charges, capacitances and gate resistance input capacitance c iss 50 output capacitance c oss 13 reverse transfer capacitance c rss v gs = 0 v, f = 100 khz, v ds = 10 v 8 pf total gate charge q g(tot) 1.15 threshold gate charge q g(th) 0.06 gate-to-source charge q gs 0.15 gate-to-drain charge q gd v gs = 4.5 v, v ds = 10 v, i d = 0.55a 0.23 nc switching characteristics turn-on delay time td(on) 22 rise time tr 80 turn-off delay time td(off) 700 fall time tf 380 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = 0.35a 0.5 v dd =10v, v gs =4.5v, i d =0.55a, r g =6? =0v 1 ua 220 310 260 360 320 460 0.7 1.5 v product specification WNM2020 sales@twtysemi.com 3 of 3 http://www.twtysemi.com
|
